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MMSF3P02HD
Power MOSFET
3 Amps, 20 Volts
P ? Channel SO ? 8
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain ? to ? source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc ? dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
http://onsemi.com
3 AMPERES, 20 VOLTS
R DS(on) = 75 m W
P ? Channel
D
G
Features
? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO ? 8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed, With Soft Recovery
? I DSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Mounting Information for SO ? 8 Package Provided
? This is a Pb ? Free Device
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted) (Note 1)
Rating Symbol Value
Unit
8
1
S
MARKING
DIAGRAM
8
SO ? 8 S3P02
CASE 751 AYWW G
STYLE 13 G
1
S3P02 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage ? Continuous
V DSS
V DGR
V GS
20
20
± 20
Vdc
Vdc
Vdc
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Continuous @ T A = 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
I D
I D
I DM
P D
T J , T stg
5.6
3.6
30
2.5
? 55 to 150
Adc
Apk
W
° C
N ? C
Source
Source
Gate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Single Pulse Drain ? to ? Source Avalanche E AS 567 mJ
Energy ? Starting T J = 25 ° C (V DD = 20 Vdc,
V GS = 5.0 Vdc, Peak I L = 9.0 Apk, L = 14
mH, R G = 25 W )
Thermal Resistance, Junction ? to ? Ambient R q JA 50 ° C/
(Note 2) W
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for P ? Channel device omitted for clarity.
2. Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided),
10 sec. max.
ORDERING INFORMATION
Device Package Shipping ?
MMSF3P02HDR2G SO ? 8 2500 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 8
1
Publication Order Number:
MMSF3P02HD/D
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